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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSBC113EF3T5G

NSBC113EF3T5G

NSBC113EF3T5G
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Part Number NSBC113EF3T5G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS DUAL NPN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 708934 pcs
Reference Price
(In US Dollars)		8000 pcs
$0.035

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Part Number NSBC113EF3T5G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS DUAL NPN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 708934 pcs Data sheet MUNx230, MMUN2230L, DTC113Ex, NSBC113EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-1123 Series -
Resistor - Emitter Base (R2) 1 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 254mW Packaging Tape & Reel (TR)
Package / Case SOT-1123 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 6 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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