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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQPF8N80C

FQPF8N80C

FQPF8N80C
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Part Number FQPF8N80C
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 8A TO-220F
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 94729 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.887$0.802$0.644$0.501$0.415

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Quantity:
Total:
$0.887

Product parameter

Part Number FQPF8N80C Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 8A TO-220F Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 94729 pcs Data sheet FQP8N80C, FQPF8N80C
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F Series QFET®
Rds On (Max) @ Id, Vgs 1.55 Ohm @ 4A, 10V Power Dissipation (Max) 59W (Tc)
Packaging Tube Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 25 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V Detailed Description N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C 8A (Tc)

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