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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQP4N80

FQP4N80

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Part Number FQP4N80
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 3.9A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 75422 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.717$0.635$0.502$0.389$0.307

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Target Price:(USD)
Quantity:
Total:
$0.717

Product parameter

Part Number FQP4N80 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 3.9A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 75422 pcs Data sheet TO220B03 Pkg DrawingFQP4N80
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB Series QFET®
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.95A, 10V Power Dissipation (Max) 130W (Tc)
Packaging Tube Package / Case TO-220-3
Other Names FQP4N80-ND
FQP4N80FS
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 35 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 3.9A (Tc) 130W (Tc) Through Hole TO-220AB Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)

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