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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB11P06TM

FQB11P06TM

FQB11P06TM
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Part Number FQB11P06TM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 60V 11.4A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 72523 pcs
Reference Price
(In US Dollars)
800 pcs
$0.281

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Quantity:
Total:
$0.281

Product parameter

Part Number FQB11P06TM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 60V 11.4A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 72523 pcs Data sheet FQB11P06
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 175 mOhm @ 5.7A, 10V Power Dissipation (Max) 3.13W (Ta), 53W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB11P06TM-ND
FQB11P06TMTR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 6 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)

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