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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDS3812

FDS3812

FDS3812
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Part Number FDS3812
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 80V 3.4A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4686 pcs
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Part Number FDS3812 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 80V 3.4A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4686 pcs Data sheet FDS3812
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 8-SO Series PowerTrench®
Rds On (Max) @ Id, Vgs 74 mOhm @ 3.4A, 10V Power - Max 900mW
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 40V Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V Detailed Description Mosfet Array 2 N-Channel (Dual) 80V 3.4A 900mW Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 3.4A

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