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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDS3512

FDS3512

FDS3512
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number FDS3512
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 80V 4A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 88045 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.907$0.818$0.657$0.511$0.423

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Target Price:(USD)
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$0.907

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Part Number FDS3512 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 80V 4A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 88045 pcs Data sheet FDS3512
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO Series PowerTrench®
Rds On (Max) @ Id, Vgs 70 mOhm @ 4A, 10V Power Dissipation (Max) 2.5W (Ta)
Packaging Original-Reel® Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names FDS3512DKR Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 40V Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Drain to Source Voltage (Vdss) 80V
Detailed Description N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SO Current - Continuous Drain (Id) @ 25°C 4A (Ta)

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