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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDMD8900

FDMD8900

FDMD8900
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Part Number FDMD8900
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 30V POWER
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 85870 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.361

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Quantity:
Total:
$0.361

Product parameter

Part Number FDMD8900 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 30V POWER Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 85870 pcs Data sheet FDMD8900
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 12-Power3.3x5 Series -
Rds On (Max) @ Id, Vgs 4 mOhm @ 19A, 10V Power - Max 2.1W
Packaging Tape & Reel (TR) Package / Case 12-PowerWDFN
Other Names FDMD8900TR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 39 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2605pF @ 15V Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Type 2 N-Channel (Dual) FET Feature Standard
Drain to Source Voltage (Vdss) 30V Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5
Current - Continuous Drain (Id) @ 25°C 19A, 17A

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