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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BC639RL1G

BC639RL1G

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Part Number BC639RL1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 80V 1A TO-92
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4975 pcs
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Part Number BC639RL1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 80V 1A TO-92 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4975 pcs Data sheet BC637, 39, 39-16
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Transistor Type NPN
Supplier Device Package TO-92-3 Series -
Power - Max 625mW Packaging Cut Tape (CT)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Other Names BC639RL1GOSCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Bipolar (BJT) Transistor NPN 80V 1A 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 1A Base Part Number BC639

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